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- D90 10-15 μm
“Continuous
Bonaccorso
"High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide"
1080 012025
GFET-S21 for Sensing applications GFET - D90 10-15 μmGFET S21 (Die size 10 mm x 10 mm) Processed in Clean Room Class 1000 The GFET S 21 chip from Graphenea is designed for measurements in liquid medium. The new version provides 12 graphene devices connected in parallel, with encapsulation on the metal pads to avoid degradation and reduce leakage currents; the probe pads are located near the periphery of the chip. It also includes a non encapsulated electrode at the center of the chip, which allows
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